Silicon Carbide (SiC) has become an alternative material to replace Silicon (Si) for Microelectromechanical Systems (MEMS) applications in harsh environments due to its desirable material properties and polytype crystal structure. To promote SiC, MEMS development towards future cost-effective products, main technology areas in material deposition and processes have attracted significant interest. This paper discusses the role of dopant incorporation of nitrogen, oxygen, aluminum, boron, phosphorus and argon on the properties of SiC films by chemical vapor deposition (CVD). Special attention is given to the growth processes of SiC thin film that offers great potential for improved efficiency due to its high stiffness, strength and resistance to oxidation at elevated temperature. An overview on the applications of SiC based thin films in electronic and MEMS devices is presented and discussed.