The growth behavior of pure and Sr included HfO 2 composite thin films for different concentrations of Sr (5, 10, and 15 Wt%) through the Jet Nebulizer Spray Pyrolysis technique is discussed in detail. The preparation of Al/HfO 2 /n-Si and Al/Sr:HfO 2 /n-Si Schottky barrier diodes and their rectification behavior were compared. The appearance of intermediate (Sr 2 HfO 4 ) and new (SrO 2 ) phases upon introduction of Sr in HfO 2 was recorded through XRD analysis, and particle size enlargement was observed. The absorption coefficients and bandgap energies of pure and Sr included HfO 2 films were determined using UV-VIS analysis, and the results imply that the presence of Sr 2 HfO 4 in Sr:HfO 2 increases the overall bandgap from 3.8 to 4.0 eV. The morphology of pure HfO 2 was heavily influenced by the presence of Sr; FESEM micrographs revealed that the self-assembled sphere like structure of HfO 2 turned into mixed morphology like the rod shape of SrO 2 and the contorted spheres of Sr 2 HfO 4 . EDAX elementary studies have confirmed the presence and percentage changes of Sr, Hf, and O in pure and Sr included composites thin films. The XPS spectrum has confirmed Sr in SrO 2 and Sr 2 HfO 4 phases, and its oxidation states in different phases were verified using short XPS scans. The I – V curves of pure (Al/HfO 2 /n-Si) and Sr:HfO 2 composite (Al/Sr–HfO 2 /n-Si) diodes were studied and compared. The 15% Sr included HfO 2 showed higher rectification behavior when compared with pure Al/HfO 2 /n-Si and composited (5 and 10%) Al/Sr–HfO 2 /n-Si at room temperature.