Thin films Fe x Si 1−x O, with iron (Fe) content between 0 to 20% have been applied to substrates made of soda lime glass by means of the spray pyrolysis process. Annealing the films allowed us to test their thermal stability. Both the as-depositedFe x Si 1−x O thin film and annealed Fe x Si 1−x Othin film were analyzed by. Researchers analyzed the structure of the films and its composition using these methods. The XRD study demonstrated that the Fe x Si 1−x Othin films, even if they are deposited or annealed, have a wurtzite structure in the plane orientation. The result shows that the films’ crystalline structure is not affected by the heating process. In addition to that, the good indicator of film quality and consistency were no signs of pinholes or cracks in the films. An iron deficiency was identified by following the annealing process, according to the compositional analysis done by EDAX. Annealing affects the integration of Fe in the film’s matrix, according to these changes occur in the composition. The band gap changes to red for Fe x Si 1−x Othin films was observed in the optical characteristics of these films while tested using Ultra Violet -Visible spectroscopy. Integrating Fe into films alters their electronic structure, and it is one important indicator for band gap change. The incorporation of Fe resulted in a reduction in resistance and it is measured by the electrical properties using the two-probe method which in turn indicates an improvement in the films’ electrical conductivity. In conclusion, the outcomes if this research supports the feasibility of incorporating iron into the silicon carbide thin films. There are major structural changes to the films’ electrical characteristics and optical properties due to this incorporation. The outcomes of this research have significant implications for the advancement of electronic and optoelectronic devices that could make use of these alterations to enhance their performance.